SPP20N60C3HKSA1

Technical Details

• Vgs(th) (Max) @ Id:3.9V @ 1mA
• Package / Case:TO-220-3
• Supplier Device Package:PG-TO220-3-1
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):208W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2400pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:114nC @ 10V

• Series:CoolMOS™
• Rds On (Max) @ Id, Vgs:190 mOhm @ 13.1A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:20.7A (Tc)
• Drain to Source Voltage (Vdss):600V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tube