SPP21N10

Technical Details

• Vgs(th) (Max) @ Id:4V @ 44µA
• Package / Case:TO-220-3
• Supplier Device Package:PG-TO220-3-1
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):90W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:865pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:38.4nC @ 10V

• Series:SIPMOS®
• Rds On (Max) @ Id, Vgs:80 mOhm @ 15A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:21A (Tc)
• Drain to Source Voltage (Vdss):100V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tube