SQ1421EDH-T1_GE3 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Package / Case:6-TSSOP, SC-88, SOT-363
• Supplier Device Package:SC-70-6 (SOT-363)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):3.3W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:355pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:5.4nC @ 4.5V

• Series:TrenchFET®
• Rds On (Max) @ Id, Vgs:290 mOhm @ 2A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:1.6A (Tc)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)