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SQJ431AEP-T1_GE3

Vishay Siliconix
SQJ431AEP-T1_GE3 HongDa Electronics SQJ431AEP-T1_GE3
  • Manufacturer Part# SQJ431AEP-T1_GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CHAN 200V
  • More DetailP-Channel 200V 9.4A (Tc) 68W (Tc) Surface Mount Po...
In Stock: 1000

Can ship immediately

Datasheet:
SQJ431AEP-T1_GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 250µA
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PowerPAK® SO-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):68W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3700pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:85nC @ 10V

 

  • Series:Automotive, AEC-Q101, TrenchFET®
  • Rds On (Max) @ Id, Vgs:305 mOhm @ 3.8A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Current - Continuous Drain (Id) @ 25°C:9.4A (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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