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SQJ443EP-T1_GE3

Vishay Siliconix
SQJ443EP-T1_GE3 HongDa Electronics SQJ443EP-T1_GE3
  • Manufacturer Part# SQJ443EP-T1_GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 40V 40A POWERPAKSO-8
  • More DetailP-Channel 40V 40A (Tc) 83W (Tc) Surface Mount Powe...
In Stock: 9000

Can ship immediately

Datasheet:
SQJ443EP-T1_GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Package / Case:PowerPAK® SO-8
  • Supplier Device Package:PowerPAK® SO-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TA)
  • Power Dissipation (Max):83W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2030pF @ 20V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:57nC @ 10V

 

  • Series:Automotive, AEC-Q101, TrenchFET®
  • Rds On (Max) @ Id, Vgs:29 mOhm @ 18A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:40A (Tc)
  • Drain to Source Voltage (Vdss):40V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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