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SQJQ900E-T1_GE3

Vishay Siliconix
SQJQ900E-T1_GE3 HongDa Electronics SQJQ900E-T1_GE3
  • Manufacturer Part# SQJQ900E-T1_GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET 2 N-CH 40V POWERPAK8X8
  • More DetailMosfet Array 2 N-Channel (Dual) 40V 100A (Tc) 75W ...
In Stock: 1000

Can ship immediately

Datasheet:
SQJQ900E-T1_GE3 Datasheet

Technical Details

  • Series:Automotive, AEC-Q101, TrenchFET®
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:2 N-Channel (Dual)
  • FET Feature:Standard
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:100A (Tc)
  • Rds On (Max) @ Id, Vgs:3.9 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:5900pF @ 20V
  • Power - Max:75W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® 8 x 8 Dual
  • Supplier Device Package:PowerPAK® 8 x 8 Dual

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