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SQJQ910EL-T1_GE3

Vishay Siliconix
SQJQ910EL-T1_GE3 HongDa Electronics SQJQ910EL-T1_GE3
  • Manufacturer Part# SQJQ910EL-T1_GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET 2 N-CH 100V POWERPAK8X8
  • More DetailMosfet Array 2 N-Channel (Dual) 100V 70A (Tc) 187W...
In Stock: 1000

Can ship immediately

Datasheet:
SQJQ910EL-T1_GE3 Datasheet

Technical Details

  • Series:Automotive, AEC-Q101, TrenchFET®
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:2 N-Channel (Dual)
  • FET Feature:Standard
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:70A (Tc)
  • Rds On (Max) @ Id, Vgs:8.6 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2832pF @ 50V
  • Power - Max:187W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® 8 x 8 Dual
  • Supplier Device Package:PowerPAK® 8 x 8 Dual

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