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STH110N8F7-2

STMicroelectronics
STH110N8F7-2 HongDa Electronics STH110N8F7-2
  • Manufacturer Part# STH110N8F7-2
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET
  • More DetailN-Channel 80V 110A (Tc) 170W (Tc) Surface Mount H2...
In Stock: 1000

Can ship immediately

Datasheet:
STH110N8F7-2 Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:45nC @ 10V
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:H2Pak-2
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):170W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3200pF @ 25V
  • Vgs (Max):±20V
  • Series:STripFET™ F7

 

  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Rds On (Max) @ Id, Vgs:6.6 mOhm @ 55A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:110A (Tc)
  • Drain to Source Voltage (Vdss):80V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active

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