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STH185N10F3-6 Discrete Semiconductor Products

STMicroelectronics
STH185N10F3-6 HongDa Electronics STH185N10F3-6
  • Manufacturer Part# STH185N10F3-6
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 180A H2PAK-6
  • More DetailN-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H...
In Stock: 1000

Can ship immediately

Datasheet:
STH185N10F3-6 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
  • Supplier Device Package:H2PAK-6
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):315W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:6665pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:114.6nC @ 10V

 

  • Series:Automotive, AEC-Q101, STripFET™ F3
  • Rds On (Max) @ Id, Vgs:4.5 mOhm @ 60A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:180A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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