STL4P2UH7

Technical Details

• Vgs(th) (Max) @ Id:1V @ 250µA
• Package / Case:6-PowerWDFN
• Supplier Device Package:PowerFlat™ (2x2)
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):2.4W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:510pF @ 10V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:4.8nC @ 4.5V

• Series:DeepGATE™, STripFET™ VII
• Rds On (Max) @ Id, Vgs:100 mOhm @ 2A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:4A (Tc)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)