STL4P3LLH6

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Package / Case:6-PowerWDFN
• Supplier Device Package:PowerFlat™ (2x2)
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):2.4W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:639pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V

• Series:DeepGATE™, STripFET™ H6
• Rds On (Max) @ Id, Vgs:56 mOhm @ 2A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:4A (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)