STS5DP3LLH6

Technical Details

• Series:DeepGATE™, STripFET™ H6
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 P-Channel (Dual)
• FET Feature:Logic Level Gate, 4.5V Drive
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:5A (Ta)
• Rds On (Max) @ Id, Vgs:56 mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:639pF @ 25V
• Power - Max:2.7W
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO