STS5N15F4

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):2.5W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2710pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:48nC @ 10V

• Series:DeepGATE™, STripFET™
• Rds On (Max) @ Id, Vgs:63 mOhm @ 2.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:5A (Tc)
• Drain to Source Voltage (Vdss):150V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)