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TK12A60D(STA4,Q,M)

Toshiba Semiconductor and Storage
TK12A60D(STA4,Q,M) HongDa Electronics TK12A60D(STA4,Q,M)
  • Manufacturer Part# TK12A60D(STA4,Q,M)
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 12A TO-220SIS
  • More DetailN-Channel 600V 12A (Ta) 45W (Tc) Through Hole TO-2...
In Stock: 1000

Can ship immediately

Datasheet:
TK12A60D(STA4,Q,M) Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220SIS
  • Mounting Type:Through Hole
  • Operating Temperature:150°C (TJ)
  • Power Dissipation (Max):45W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1800pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V

 

  • Series:π-MOSVII
  • Rds On (Max) @ Id, Vgs:550 mOhm @ 6A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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