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TK12E60W,S1VX

Toshiba Semiconductor and Storage
TK12E60W,S1VX HongDa Electronics TK12E60W,S1VX
  • Manufacturer Part# TK12E60W,S1VX
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N CH 600V 11.5A TO-220
  • More DetailN-Channel 600V 11.5A (Ta) 110W (Tc) Through Hole T...
In Stock: 1000

Can ship immediately

Datasheet:
TK12E60W,S1VX Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.7V @ 600µA
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Mounting Type:Through Hole
  • Operating Temperature:150°C (TJ)
  • Power Dissipation (Max):110W (Tc)
  • FET Feature:Super Junction
  • Input Capacitance (Ciss) (Max) @ Vds:890pF @ 300V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V

 

  • Series:DTMOSIV
  • Rds On (Max) @ Id, Vgs:300 mOhm @ 5.8A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:11.5A (Ta)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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