TK650A60F,S4X

Technical Details

• Vgs(th) (Max) @ Id:4V @ 1.16mA
• Package / Case:TO-220-3 Full Pack
• Supplier Device Package:TO-220SIS
• Mounting Type:Through Hole
• Operating Temperature:150°C
• Power Dissipation (Max):45W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1320pF @ 300V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:34nC @ 10V

• Series:U-MOSIX
• Rds On (Max) @ Id, Vgs:650 mOhm @ 5.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:11A (Ta)
• Drain to Source Voltage (Vdss):600V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube