TK65S04N1L,LQ

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 300µA
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package:DPAK+
• Mounting Type:Surface Mount
• Operating Temperature:175°C (TJ)
• Power Dissipation (Max):107W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2550pF @ 10V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V

• Series:U-MOSVIII-H
• Rds On (Max) @ Id, Vgs:4.3 mOhm @ 32.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:65A (Ta)
• Drain to Source Voltage (Vdss):40V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)