TN5325N3-G-P002

Technical Details

• Vgs(th) (Max) @ Id:2V @ 1mA
• Package / Case:TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package:TO-92-3
• Mounting Type:Through Hole
• Operating Temperature:--
• Power Dissipation (Max):740mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:110pF @ 25V
• Vgs (Max):±20V
• Series:--

• Rds On (Max) @ Id, Vgs:7 Ohm @ 1A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:215mA (Ta)
• Drain to Source Voltage (Vdss):250V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)