TN5335K1-G Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2V @ 1mA
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:SOT-23 (TO-236AB)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):360mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:110pF @ 25V
• Vgs (Max):±20V
• Series:--

• Rds On (Max) @ Id, Vgs:15 Ohm @ 200mA, 10V
• Drive Voltage (Max Rds On, Min Rds On):3V, 10V
• Current - Continuous Drain (Id) @ 25°C:110mA (Tj)
• Drain to Source Voltage (Vdss):350V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)