TPH6R004PL,LQ

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
• Package / Case:8-PowerVDFN
• Supplier Device Package:8-SOP Advance (5x5)
• Mounting Type:Surface Mount
• Operating Temperature:175°C
• Power Dissipation (Max):1.8W (Ta), 81W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2700pF @ 20V
• Vgs (Max):±20V
• Series:U-MOSIX-H

• Vgs(th) (Max) @ Id:2.4V @ 200µA
• Rds On (Max) @ Id, Vgs:6 mOhm @ 24.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:87A (Ta), 49A (Tc)
• Drain to Source Voltage (Vdss):40V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active