TPH6R30ANL,L1Q

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:55nC @ 10V
• Package / Case:8-PowerVDFN
• Supplier Device Package:8-SOP Advance (5x5)
• Mounting Type:Surface Mount
• Operating Temperature:150°C
• Power Dissipation (Max):2.5W (Ta), 54W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:4300pF @ 50V
• Vgs (Max):±20V
• Series:U-MOSVIII-H

• Vgs(th) (Max) @ Id:2.5V @ 500µA
• Rds On (Max) @ Id, Vgs:6.3 mOhm @ 22.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:66A (Ta), 45A (Tc)
• Drain to Source Voltage (Vdss):100V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active