Packaging: Bulk
Part Status: Active
FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25C: 170mA (Ta)
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25C: 8A
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V