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HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)

Results: 1,504

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Price(USD)
RN2901FE(TE85L,F)

RN2901FE(TE85L,F)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RN2901FE(TE85L,F) Datasheet

In Stock: 1000

RFQ
RN1601(TE85L,F)

RN1601(TE85L,F)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RN1601(TE85L,F) Datasheet

In Stock: 1000

RFQ
BCR129SE6327HTSA1

BCR129SE6327HTSA1

Infineon Technologies
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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BCR129SE6327HTSA1 Datasheet

In Stock: 1000

RFQ
RN2902FE(T5L,F,T)

RN2902FE(T5L,F,T)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RN2902FE(T5L,F,T) Datasheet

In Stock: 1000

RFQ
EMG2DXV5T5G

EMG2DXV5T5G

ON Semiconductor
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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EMG2DXV5T5G Datasheet

In Stock: 1000

RFQ
RN1908FE(TE85L,F)

RN1908FE(TE85L,F)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RN1908FE(TE85L,F) Datasheet

In Stock: 4000

RFQ
RN2708JE(TE85L,F)

RN2708JE(TE85L,F)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RN2708JE(TE85L,F) Datasheet

In Stock: 1000

RFQ
NSBA144WDXV6T1G

NSBA144WDXV6T1G

ON Semiconductor
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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NSBA144WDXV6T1G Datasheet

In Stock: 1000

RFQ
PUMD12/DG/B3,115

PUMD12/DG/B3,115

Nexperia USA Inc.
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms

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PUMD12/DG/B3,115 Datasheet

In Stock: 1000

RFQ
RN1910FE,LF(CT

RN1910FE,LF(CT

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RN1910FE,LF(CT Datasheet

In Stock: 8000

RFQ
EMD53T2R

EMD53T2R

ROHM Semiconductor
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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EMD53T2R Datasheet

In Stock: 1000

RFQ
RN2910FE,LF(CB

RN2910FE,LF(CB

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RN2910FE,LF(CB Datasheet

In Stock: 4000

RFQ
NSBA143TDXV6T1

NSBA143TDXV6T1

ON Semiconductor
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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NSBA143TDXV6T1 Datasheet

In Stock: 1000

RFQ
RN2710JE(TE85L,F)

RN2710JE(TE85L,F)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN2710JE(TE85L,F) Datasheet

In Stock: 1000

RFQ
PUMH2,115

PUMH2,115

Nexperia USA Inc.
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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PUMH2,115 Datasheet

In Stock: 1000

RFQ
PEMH30,315

PEMH30,315

Nexperia USA Inc.
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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PEMH30,315 Datasheet

In Stock: 1000

RFQ
PEMD30,315

PEMD30,315

Nexperia USA Inc.
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

PEMD30,315 Datasheet

In Stock: 1000

RFQ
PUMH19,115

PUMH19,115

Nexperia USA Inc.
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

PUMH19,115 Datasheet

In Stock: 1000

RFQ
EMB4T2R

EMB4T2R

ROHM Semiconductor
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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EMB4T2R Datasheet

In Stock: 1000

RFQ
EMG2DXV5T1G

EMG2DXV5T1G

ON Semiconductor
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

EMG2DXV5T1G Datasheet

In Stock: 1000

RFQ
RN1906FE(T5L,F,T)

RN1906FE(T5L,F,T)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN1906FE(T5L,F,T) Datasheet

In Stock: 1000

RFQ
RN1706JE(TE85L,F)

RN1706JE(TE85L,F)

Toshiba Semiconductor and Storage
 Packaging: Cut Tape (CT)
 Part Status: Discontinued at Digi-Key
 Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN1706JE(TE85L,F) Datasheet

In Stock: 5

RFQ
PEMH13,115

PEMH13,115

Nexperia USA Inc.
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

PEMH13,115 Datasheet

In Stock: 8000

RFQ
NSBC114TDXV6T1G

NSBC114TDXV6T1G

ON Semiconductor
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

NSBC114TDXV6T1G Datasheet

In Stock: 4000

RFQ
RN2904FE,LF

RN2904FE,LF

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN2904FE,LF Datasheet

In Stock: 4000

RFQ
RN1611(TE85L,F)

RN1611(TE85L,F)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN1611(TE85L,F) Datasheet

In Stock: 3000

RFQ
RN2906FE(TE85L,F)

RN2906FE(TE85L,F)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN2906FE(TE85L,F) Datasheet

In Stock: 1000

RFQ
RN1502(TE85L,F)

RN1502(TE85L,F)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN1502(TE85L,F) Datasheet

In Stock: 1000

RFQ
RN2906,LF

RN2906,LF

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN2906,LF Datasheet

In Stock: 3000

RFQ
RN1964FE(TE85L,F)

RN1964FE(TE85L,F)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN1964FE(TE85L,F) Datasheet

In Stock: 4000

RFQ
RN2701JE(TE85L,F)

RN2701JE(TE85L,F)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN2701JE(TE85L,F) Datasheet

In Stock: 1000

RFQ
RN2903,LF(CT

RN2903,LF(CT

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN2903,LF(CT Datasheet

In Stock: 1000

RFQ
EMC2DXV5T1G

EMC2DXV5T1G

ON Semiconductor
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

EMC2DXV5T1G Datasheet

In Stock: 1000

RFQ
NSBC123TDP6T5G

NSBC123TDP6T5G

ON Semiconductor
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

NSBC123TDP6T5G Datasheet

In Stock: 1000

RFQ
RN2971FE(TE85L,F)

RN2971FE(TE85L,F)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN2971FE(TE85L,F) Datasheet

In Stock: 1000

RFQ
RN1907,LF

RN1907,LF

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN1907,LF Datasheet

In Stock: 1000

RFQ
PEMB13,115

PEMB13,115

Nexperia USA Inc.
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

PEMB13,115 Datasheet

In Stock: 1000

RFQ
PEMD15,115

PEMD15,115

Nexperia USA Inc.
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

PEMD15,115 Datasheet

In Stock: 1000

RFQ
RN1703JE(TE85L,F)

RN1703JE(TE85L,F)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN1703JE(TE85L,F) Datasheet

In Stock: 1000

RFQ
RN1911(T5L,F,T)

RN1911(T5L,F,T)

Toshiba Semiconductor and Storage
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

--

RN1911(T5L,F,T) Datasheet

In Stock: 1000

RFQ

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