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SINGLE-ATOM TRANSISTOR

Results: 213

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Mft.Part#
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Price(USD)
GA03JT12-247

GA03JT12-247

GeneSiC Semiconductor
 Packaging: Tube
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 3A (Tc) (95C)

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GA03JT12-247 Datasheet

In Stock: 1000

RFQ
GA06JT12-247

GA06JT12-247

GeneSiC Semiconductor
 Packaging: Tube
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 6A (Tc) (90C)

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GA06JT12-247 Datasheet

In Stock: 1000

RFQ
2N7639-GA

2N7639-GA

GeneSiC Semiconductor
 Packaging: Bulk
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 15A (Tc) (155C)

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2N7639-GA Datasheet

In Stock: 1000

RFQ
2N7636-GA

2N7636-GA

GeneSiC Semiconductor
 Packaging: Tube
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 4A (Tc) (165C)

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2N7636-GA Datasheet

In Stock: 1000

RFQ
GA50JT17-247

GA50JT17-247

GeneSiC Semiconductor
 Packaging: Tube
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1700V
 Current - Continuous Drain (Id) @ 25C: 100A (Tc)

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GA50JT17-247 Datasheet

In Stock: 1000

RFQ
GA50JT12-247

GA50JT12-247

GeneSiC Semiconductor
 Packaging: Tube
 Part Status: Active
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 100A (Tc)

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GA50JT12-247 Datasheet

In Stock: 38

RFQ
GA20SICP12-247

GA20SICP12-247

GeneSiC Semiconductor
 Packaging: Tube
 Part Status: Active
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 45A (Tc)

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GA20SICP12-247 Datasheet

In Stock: 1000

RFQ
C3M0075120J-TR

C3M0075120J-TR

Cree/Wolfspeed
 Series: C3M
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: SiC (Silicon Carbide Junction Transistor)

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C3M0075120J-TR Datasheet

In Stock: 1000

RFQ
IXFN50N120SK

IXFN50N120SK

IXYS
 Part Status: Active
 FET Type: N-Channel
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 48A (Tc)

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IXFN50N120SK Datasheet

In Stock: 1000

RFQ
IXFN70N120SK

IXFN70N120SK

IXYS
 Part Status: Active
 FET Type: N-Channel
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 68A (Tc)

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IXFN70N120SK Datasheet

In Stock: 1000

RFQ
C3M0065100J-TR

C3M0065100J-TR

Cree/Wolfspeed
 Series: C3M
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: SiC (Silicon Carbide Junction Transistor)

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C3M0065100J-TR Datasheet

In Stock: 1000

RFQ
IXFN50N120SIC

IXFN50N120SIC

IXYS
 Part Status: Active
 FET Type: N-Channel
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 47A (Tc)

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IXFN50N120SIC Datasheet

In Stock: 1000

RFQ
SQJQ402E-T1_GE3

SQJQ402E-T1_GE3

Vishay Siliconix
 Series: Automotive, AEC-Q101, TrenchFET
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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SQJQ402E-T1_GE3 Datasheet

In Stock: 1000

RFQ

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