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All products for Toshiba Semiconductor and Storage

Results: 4,624

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TB67S213FTAG,EL

TB67S213FTAG,EL

Toshiba Semiconductor and Storage
TB67S213FTAG,EL Datasheet

In Stock: 4000

 Packaging: Tape & Reel (TR)
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Moisture Sensitivity Level (MSL): 3 (168 Hours)
 Motor Type - Stepper: Bipolar
  • 4000: $0.8379
RFQ
TB67S521FTAG,EL

TB67S521FTAG,EL

Toshiba Semiconductor and Storage
TB67S521FTAG,EL Datasheet

In Stock: 1000

 Series: *
 Packaging: Tape & Reel (TR)
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Mounting Type: Surface Mount
  • 4000: $0.8798
RFQ
2SK2145-Y(TE85L,F)

2SK2145-Y(TE85L,F)

Toshiba Semiconductor and Storage
2SK2145-Y(TE85L,F) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: 2 N-Channel (Dual)
 Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
 Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA

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RFQ
MT3S111P(TE12L,F)

MT3S111P(TE12L,F)

Toshiba Semiconductor and Storage
MT3S111P(TE12L,F) Datasheet

In Stock: 10000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN
 Voltage - Collector Emitter Breakdown (Max): 6V
 Frequency - Transition: 8GHz

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RFQ
HN4C06J-BL(TE85L,F

HN4C06J-BL(TE85L,F

Toshiba Semiconductor and Storage
HN4C06J-BL(TE85L,F Datasheet

In Stock: 3000

 Packaging: Tape & Reel (TR)
 Part Status: Not For New Designs
 Transistor Type: 2 NPN (Dual) Common Emitter
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 120V

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RFQ
2SC4207-GR(TE85L,F

2SC4207-GR(TE85L,F

Toshiba Semiconductor and Storage
2SC4207-GR(TE85L,F Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN (Dual) Common Emitter
 Current - Collector (Ic) (Max): 150mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RFQ
RN4990(T5L,F,T)

RN4990(T5L,F,T)

Toshiba Semiconductor and Storage
RN4990(T5L,F,T) Datasheet

In Stock: 3000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RN2711JE(TE85L,F)

RN2711JE(TE85L,F)

Toshiba Semiconductor and Storage
RN2711JE(TE85L,F) Datasheet

In Stock: 4000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RFQ
RN2511(TE85L,F)

RN2511(TE85L,F)

Toshiba Semiconductor and Storage
RN2511(TE85L,F) Datasheet

In Stock: 3000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RN2911FE(TE85L,F)

RN2911FE(TE85L,F)

Toshiba Semiconductor and Storage
RN2911FE(TE85L,F) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RFQ
2SC5065-O(TE85L,F)

2SC5065-O(TE85L,F)

Toshiba Semiconductor and Storage
2SC5065-O(TE85L,F) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN
 Voltage - Collector Emitter Breakdown (Max): 12V
 Frequency - Transition: 7GHz

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RFQ
RN2610(TE85L,F)

RN2610(TE85L,F)

Toshiba Semiconductor and Storage
RN2610(TE85L,F) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RFQ
HN3A51F(TE85L,F)

HN3A51F(TE85L,F)

Toshiba Semiconductor and Storage
HN3A51F(TE85L,F) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 120V

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RFQ
HN3C51F-BL(TE85L,F

HN3C51F-BL(TE85L,F

Toshiba Semiconductor and Storage
HN3C51F-BL(TE85L,F Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 120V

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RFQ
HN1B04F(TE85L,F)

HN1B04F(TE85L,F)

Toshiba Semiconductor and Storage
HN1B04F(TE85L,F) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN, PNP
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 30V

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RFQ
RN4903(T5L,F,T)

RN4903(T5L,F,T)

Toshiba Semiconductor and Storage
RN4903(T5L,F,T) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RFQ
TK28A65W,S5X

TK28A65W,S5X

Toshiba Semiconductor and Storage
TK28A65W,S5X Datasheet

In Stock: 1000

 Series: DTMOSIV
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
SSM3K347R,LF

SSM3K347R,LF

Toshiba Semiconductor and Storage
SSM3K347R,LF Datasheet

In Stock: 3000

 Series: U-MOSIV
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
RN2112,LF(CT

RN2112,LF(CT

Toshiba Semiconductor and Storage
RN2112,LF(CT Datasheet

In Stock: 3000

 Packaging: Tape & Reel (TR)
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Moisture Sensitivity Level (MSL): 1 (Unlimited)
 Transistor Type: PNP - Pre-Biased

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SSM3J15CT(TPL3)

SSM3J15CT(TPL3)

Toshiba Semiconductor and Storage
SSM3J15CT(TPL3) Datasheet

In Stock: 6524

 Series: -MOSVI
 Packaging: Cut Tape (CT)
 Part Status: Discontinued at Digi-Key
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
TK380P65Y,RQ

TK380P65Y,RQ

Toshiba Semiconductor and Storage
TK380P65Y,RQ Datasheet

In Stock: 1000

 Series: DTMOSV
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
TPN2010FNH,L1Q

TPN2010FNH,L1Q

Toshiba Semiconductor and Storage
TPN2010FNH,L1Q Datasheet

In Stock: 1000

 Series: U-MOSVIII-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
TK12A50E,S4X

TK12A50E,S4X

Toshiba Semiconductor and Storage
TK12A50E,S4X Datasheet

In Stock: 68

 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 500V

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RFQ
TK30E06N1,S1X

TK30E06N1,S1X

Toshiba Semiconductor and Storage
TK30E06N1,S1X Datasheet

In Stock: 111

 Series: U-MOSVIII-H
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
SSM6K411TU(TE85L,F

SSM6K411TU(TE85L,F

Toshiba Semiconductor and Storage
SSM6K411TU(TE85L,F Datasheet

In Stock: 1000

 Series: U-MOSIV
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
2SC2383-Y(T6DNS,FM

2SC2383-Y(T6DNS,FM

Toshiba Semiconductor and Storage
2SC2383-Y(T6DNS,FM Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: NPN
 Current - Collector (Ic) (Max): 1A
 Voltage - Collector Emitter Breakdown (Max): 160V

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RFQ
2SC3668-Y,T2WNLF(J

2SC3668-Y,T2WNLF(J

Toshiba Semiconductor and Storage
2SC3668-Y,T2WNLF(J Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: NPN
 Current - Collector (Ic) (Max): 2A
 Voltage - Collector Emitter Breakdown (Max): 50V

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2SC3669-Y,T2PASF(M

2SC3669-Y,T2PASF(M

Toshiba Semiconductor and Storage
2SC3669-Y,T2PASF(M Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: NPN
 Current - Collector (Ic) (Max): 2A
 Voltage - Collector Emitter Breakdown (Max): 80V

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RFQ
2SC5171(ONK,Q,M)

2SC5171(ONK,Q,M)

Toshiba Semiconductor and Storage
2SC5171(ONK,Q,M) Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: NPN
 Current - Collector (Ic) (Max): 2A
 Voltage - Collector Emitter Breakdown (Max): 180V

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RFQ
2SD2206(TE6,F,M)

2SD2206(TE6,F,M)

Toshiba Semiconductor and Storage
2SD2206(TE6,F,M) Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: NPN
 Current - Collector (Ic) (Max): 2A
 Voltage - Collector Emitter Breakdown (Max): 100V

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RFQ
TPH2010FNH,L1Q

TPH2010FNH,L1Q

Toshiba Semiconductor and Storage
TPH2010FNH,L1Q Datasheet

In Stock: 1000

 Series: U-MOSVIII-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
2SK2009TE85LF

2SK2009TE85LF

Toshiba Semiconductor and Storage
2SK2009TE85LF Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V

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RFQ
HN1D03FU,LF

HN1D03FU,LF

Toshiba Semiconductor and Storage
HN1D03FU,LF Datasheet

In Stock: 3000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Configuration: 2 Pair CA + CC
 Diode Type: Standard
 Voltage - DC Reverse (Vr) (Max): 80V

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RFQ
1SS413,L3M

1SS413,L3M

Toshiba Semiconductor and Storage
1SS413,L3M Datasheet

In Stock: 20000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 20V
 Current - Average Rectified (Io): 50mA

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RFQ
TK4A60D(STA4,Q,M)

TK4A60D(STA4,Q,M)

Toshiba Semiconductor and Storage
TK4A60D(STA4,Q,M) Datasheet

In Stock: 1000

 Series: -MOSVII
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
DSF01S30SL,L3F

DSF01S30SL,L3F

Toshiba Semiconductor and Storage
DSF01S30SL,L3F Datasheet

In Stock: 10000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 30V
 Current - Average Rectified (Io): 100mA

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RFQ
TK4A50D(STA4,Q,M)

TK4A50D(STA4,Q,M)

Toshiba Semiconductor and Storage
TK4A50D(STA4,Q,M) Datasheet

In Stock: 1000

 Series: -MOSVII
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
TK4P50D(T6RSS-Q)

TK4P50D(T6RSS-Q)

Toshiba Semiconductor and Storage
TK4P50D(T6RSS-Q) Datasheet

In Stock: 1000

 Series: -MOSVII
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
TK42E12N1,S1X

TK42E12N1,S1X

Toshiba Semiconductor and Storage
TK42E12N1,S1X Datasheet

In Stock: 1000

 Series: U-MOSVIII-H
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
CRZ39(TE85L,Q,M)

CRZ39(TE85L,Q,M)

Toshiba Semiconductor and Storage
CRZ39(TE85L,Q,M) Datasheet

In Stock: 1000

 Part Status: Active
 Voltage - Zener (Nom) (Vz): 39V
 Tolerance: 10%
 Power - Max: 700mW
 Impedance (Max) (Zzt): 35 Ohms

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