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All products for Toshiba Semiconductor and Storage

Results: 4,624

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LB4X2X8U

LB4X2X8U

Toshiba Semiconductor and Storage
LB4X2X8U Datasheet

In Stock: 4863

 Series: Amobeads
 Packaging: Bulk
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Moisture Sensitivity Level (MSL): 1 (Unlimited)

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SSM6J215FE(TE85L,F

SSM6J215FE(TE85L,F

Toshiba Semiconductor and Storage
SSM6J215FE(TE85L,F Datasheet

In Stock: 12000

 Series: U-MOSVI
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)

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TK65S04N1L,LQ

TK65S04N1L,LQ

Toshiba Semiconductor and Storage
TK65S04N1L,LQ Datasheet

In Stock: 2000

 Series: U-MOSVIII-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TPH4R606NH,L1Q

TPH4R606NH,L1Q

Toshiba Semiconductor and Storage
TPH4R606NH,L1Q Datasheet

In Stock: 5000

 Series: U-MOSVIII-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RN2404TE85LF

RN2404TE85LF

Toshiba Semiconductor and Storage
RN2404TE85LF Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Moisture Sensitivity Level (MSL): 1 (Unlimited)
 Transistor Type: PNP - Pre-Biased

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TK25A60X,S5X

TK25A60X,S5X

Toshiba Semiconductor and Storage
TK25A60X,S5X Datasheet

In Stock: 51

 Series: DTMOSIV-H
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TPH5900CNH,L1Q

TPH5900CNH,L1Q

Toshiba Semiconductor and Storage
TPH5900CNH,L1Q Datasheet

In Stock: 4960

 Series: U-MOSVIII-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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2SA1954-A(TE85L,F)

2SA1954-A(TE85L,F)

Toshiba Semiconductor and Storage
2SA1954-A(TE85L,F) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 12V

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TPW1R306PL,L1Q

TPW1R306PL,L1Q

Toshiba Semiconductor and Storage
TPW1R306PL,L1Q Datasheet

In Stock: 1000

 Series: U-MOSIX-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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2SA1428-O,T2WNLF(J

2SA1428-O,T2WNLF(J

Toshiba Semiconductor and Storage
2SA1428-O,T2WNLF(J Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: PNP
 Current - Collector (Ic) (Max): 2A
 Voltage - Collector Emitter Breakdown (Max): 50V

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2SA1837(LBSAN,F,M)

2SA1837(LBSAN,F,M)

Toshiba Semiconductor and Storage
2SA1837(LBSAN,F,M) Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: PNP
 Current - Collector (Ic) (Max): 1A
 Voltage - Collector Emitter Breakdown (Max): 230V

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2SA965-Y,T6F(J

2SA965-Y,T6F(J

Toshiba Semiconductor and Storage
2SA965-Y,T6F(J Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: PNP
 Current - Collector (Ic) (Max): 800mA
 Voltage - Collector Emitter Breakdown (Max): 120V

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2SC5171,ONKQ(J

2SC5171,ONKQ(J

Toshiba Semiconductor and Storage
2SC5171,ONKQ(J Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: NPN
 Current - Collector (Ic) (Max): 2A
 Voltage - Collector Emitter Breakdown (Max): 180V

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TPCC8093,L1Q

TPCC8093,L1Q

Toshiba Semiconductor and Storage
TPCC8093,L1Q Datasheet

In Stock: 1000

 Series: U-MOSVII
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V

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TJ20S04M3L(T6L1,NQ

TJ20S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage
TJ20S04M3L(T6L1,NQ Datasheet

In Stock: 1000

 Series: U-MOSVI
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)

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2SJ377(TE16R1,NQ)

2SJ377(TE16R1,NQ)

Toshiba Semiconductor and Storage
2SJ377(TE16R1,NQ) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 60V

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TK55D10J1(Q)

TK55D10J1(Q)

Toshiba Semiconductor and Storage
TK55D10J1(Q) Datasheet

In Stock: 1000

 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V

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TK60D08J1(Q)

TK60D08J1(Q)

Toshiba Semiconductor and Storage
TK60D08J1(Q) Datasheet

In Stock: 1000

 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 75V

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TPCA8018-H(TE12LQM

TPCA8018-H(TE12LQM

Toshiba Semiconductor and Storage
TPCA8018-H(TE12LQM Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V

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TK7P60W,RVQ

TK7P60W,RVQ

Toshiba Semiconductor and Storage
TK7P60W,RVQ Datasheet

In Stock: 1000

 Series: DTMOSIV
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TK3A65D(STA4,Q,M)

TK3A65D(STA4,Q,M)

Toshiba Semiconductor and Storage
TK3A65D(STA4,Q,M) Datasheet

In Stock: 1000

 Series: -MOSVII
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TK8A10K3,S5Q

TK8A10K3,S5Q

Toshiba Semiconductor and Storage
TK8A10K3,S5Q Datasheet

In Stock: 33

 Series: U-MOSIV
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TK31V60W,LVQ

TK31V60W,LVQ

Toshiba Semiconductor and Storage
TK31V60W,LVQ Datasheet

In Stock: 1000

 Series: DTMOSIV
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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CRY82(TE85L,Q,M)

CRY82(TE85L,Q,M)

Toshiba Semiconductor and Storage
CRY82(TE85L,Q,M) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Voltage - Zener (Nom) (Vz): 8.2V
 Tolerance: 10%
 Power - Max: 700mW

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DF2B6.8E,L3F

DF2B6.8E,L3F

Toshiba Semiconductor and Storage
DF2B6.8E,L3F Datasheet

In Stock: 8000

 Packaging: Tape & Reel (TR)
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Moisture Sensitivity Level (MSL): 1 (Unlimited)
 Type: Zener
  • 8000: $0.0357
  • 16000: $0.0318
  • 24000: $0.0298
  • 56000: $0.0265
RFQ
DF5A6.2LJE,LM

DF5A6.2LJE,LM

Toshiba Semiconductor and Storage
DF5A6.2LJE,LM Datasheet

In Stock: 4000

 Packaging: Tape & Reel (TR)
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Moisture Sensitivity Level (MSL): 1 (Unlimited)
 Type: Zener
  • 4000: $0.038
  • 8000: $0.0331
  • 12000: $0.0281
  • 28000: $0.0265
  • 100000: $0.0221
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DF5A6.8CFU(TE85L,F

DF5A6.8CFU(TE85L,F

Toshiba Semiconductor and Storage
DF5A6.8CFU(TE85L,F Datasheet

In Stock: 3000

 Packaging: Tape & Reel (TR)
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Moisture Sensitivity Level (MSL): 1 (Unlimited)
 Type: Zener
  • 3000: $0.0548
  • 6000: $0.0517
  • 15000: $0.0472
  • 30000: $0.0441
  • 75000: $0.0406
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CUS05S30,H3F

CUS05S30,H3F

Toshiba Semiconductor and Storage
CUS05S30,H3F Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 30V
 Current - Average Rectified (Io): 500mA

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1SS193S,LF(D

1SS193S,LF(D

Toshiba Semiconductor and Storage
1SS193S,LF(D Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Diode Type: Standard
 Voltage - DC Reverse (Vr) (Max): 80V
 Current - Average Rectified (Io): 100mA

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SSM3K15FS,LF

SSM3K15FS,LF

Toshiba Semiconductor and Storage
SSM3K15FS,LF Datasheet

In Stock: 1000

 Series: -MOSVI
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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SSM3K301T(TE85L,F)

SSM3K301T(TE85L,F)

Toshiba Semiconductor and Storage
SSM3K301T(TE85L,F) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V

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1SS417,L3M

1SS417,L3M

Toshiba Semiconductor and Storage
1SS417,L3M Datasheet

In Stock: 10000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 40V
 Current - Average Rectified (Io): 100mA

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TMPM061FWFG(C,OHZ)

TMPM061FWFG(C,OHZ)

Toshiba Semiconductor and Storage
TMPM061FWFG(C,OHZ) Datasheet

In Stock: 1000

 Series: *
 Part Status: Active
  • 900: $2.2523
RFQ
TC75W56FU,LF

TC75W56FU,LF

Toshiba Semiconductor and Storage
TC75W56FU,LF Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Moisture Sensitivity Level (MSL): 1 (Unlimited)
 Type: General Purpose
  • 3000: $0.0894
  • 6000: $0.084
  • 15000: $0.0786
  • 30000: $0.0721
  • 75000: $0.0694
RFQ
TLP184(TPR,E)

TLP184(TPR,E)

Toshiba Semiconductor and Storage
TLP184(TPR,E) Datasheet

In Stock: 9000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Number of Channels: 1
 Voltage - Isolation: 3750Vrms
 Current Transfer Ratio (Min): 50% @ 5mA

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TLP117(F)

TLP117(F)

Toshiba Semiconductor and Storage
TLP117(F) Datasheet

In Stock: 195

 Packaging: Tube
 Part Status: Active
 Number of Channels: 1
 Inputs - Side 1/Side 2: 1/0
 Voltage - Isolation: 3750Vrms

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TLP2361(V4-TPR,E

TLP2361(V4-TPR,E

Toshiba Semiconductor and Storage
TLP2361(V4-TPR,E Datasheet

In Stock: 1000

 Part Status: Active
 Number of Channels: 1
 Inputs - Side 1/Side 2: 1/0
 Voltage - Isolation: 3750Vrms
 Common Mode Transient Immunity (Min): 20kV/s

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TLP126(F)

TLP126(F)

Toshiba Semiconductor and Storage
TLP126(F) Datasheet

In Stock: 12677

 Packaging: Tube
 Part Status: Active
 Number of Channels: 1
 Voltage - Isolation: 3750Vrms
 Current Transfer Ratio (Min): 100% @ 1mA

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TLP2631(LF5,F)

TLP2631(LF5,F)

Toshiba Semiconductor and Storage
TLP2631(LF5,F) Datasheet

In Stock: 1000

 Part Status: Active
 Number of Channels: 2
 Inputs - Side 1/Side 2: 2/0
 Voltage - Isolation: 2500Vrms
 Common Mode Transient Immunity (Min): 1kV/s

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TLP385(BLL-TPR,E

TLP385(BLL-TPR,E

Toshiba Semiconductor and Storage
TLP385(BLL-TPR,E Datasheet

In Stock: 1000

 Part Status: Active
 Number of Channels: 1
 Voltage - Isolation: 5000Vrms
 Current Transfer Ratio (Min): 200% @ 5mA
 Current Transfer Ratio (Max): 400% @ 5mA

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