TPCC8093,L1Q

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:16nC @ 5V
• Package / Case:8-PowerVDFN
• Supplier Device Package:8-TSON Advance (3.3x3.3)
• Mounting Type:Surface Mount
• Operating Temperature:150°C
• Power Dissipation (Max):1.9W (Ta), 30W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1860pF @ 10V
• Vgs (Max):±12V
• Series:U-MOSVII

• Vgs(th) (Max) @ Id:1.2V @ 500µA
• Rds On (Max) @ Id, Vgs:5.8 mOhm @ 10.5A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:21A (Ta)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active