TPCC8103(TE12L,QM)

Technical Details

• Vgs(th) (Max) @ Id:2V @ 1mA
• Package / Case:8-PowerVDFN
• Supplier Device Package:8-TSON Advance (3.3x3.3)
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):700mW (Ta), 27W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1600pF @ 10V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V

• Series:U-MOSV
• Rds On (Max) @ Id, Vgs:12 mOhm @ 9A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Current - Continuous Drain (Id) @ 25°C:18A (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Discontinued at Digi-Key
• Packaging:Cut Tape (CT)