TPCC8001-H(TE12LQM

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 1mA
• Package / Case:8-PowerVDFN
• Supplier Device Package:8-TSON Advance (3.3x3.3)
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):700mW (Ta), 30W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2500pF @ 10V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V

• Series:U-MOSV-H
• Rds On (Max) @ Id, Vgs:8.3 mOhm @ 11A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:22A (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)