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All products for Toshiba Semiconductor and Storage

Results: 4,624

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2SA965-O,F(J

2SA965-O,F(J

Toshiba Semiconductor and Storage
2SA965-O,F(J Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: PNP
 Current - Collector (Ic) (Max): 800mA
 Voltage - Collector Emitter Breakdown (Max): 120V

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2SC2235-Y,F(J

2SC2235-Y,F(J

Toshiba Semiconductor and Storage
2SC2235-Y,F(J Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: NPN
 Current - Collector (Ic) (Max): 800mA
 Voltage - Collector Emitter Breakdown (Max): 120V

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2SC4793,HFEF(J

2SC4793,HFEF(J

Toshiba Semiconductor and Storage
2SC4793,HFEF(J Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: NPN
 Current - Collector (Ic) (Max): 1A
 Voltage - Collector Emitter Breakdown (Max): 230V

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2SD2695(T6CNO,A,F)

2SD2695(T6CNO,A,F)

Toshiba Semiconductor and Storage
2SD2695(T6CNO,A,F) Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: NPN
 Current - Collector (Ic) (Max): 2A
 Voltage - Collector Emitter Breakdown (Max): 60V

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TK25E60X,S1X

TK25E60X,S1X

Toshiba Semiconductor and Storage
TK25E60X,S1X Datasheet

In Stock: 1000

 Series: DTMOSIV-H
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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SSM3J134TU,LF

SSM3J134TU,LF

Toshiba Semiconductor and Storage
SSM3J134TU,LF Datasheet

In Stock: 6000

 Series: U-MOSVI
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)

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TK56E12N1,S1X

TK56E12N1,S1X

Toshiba Semiconductor and Storage
TK56E12N1,S1X Datasheet

In Stock: 1000

 Series: U-MOSVIII-H
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TK31J60W5,S1VQ

TK31J60W5,S1VQ

Toshiba Semiconductor and Storage
TK31J60W5,S1VQ Datasheet

In Stock: 1000

 Series: DTMOSIV
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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2SK2231(TE16R1,NQ)

2SK2231(TE16R1,NQ)

Toshiba Semiconductor and Storage
2SK2231(TE16R1,NQ) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 60V

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1SS309(TE85L,F)

1SS309(TE85L,F)

Toshiba Semiconductor and Storage
1SS309(TE85L,F) Datasheet

In Stock: 9000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Configuration: 4 Common Cathode
 Diode Type: Standard
 Voltage - DC Reverse (Vr) (Max): 80V

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GT50J121(Q)

GT50J121(Q)

Toshiba Semiconductor and Storage
GT50J121(Q) Datasheet

In Stock: 1000

 Packaging: Tube
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Obsolete
 Moisture Sensitivity Level (MSL): 1 (Unlimited)
 Voltage - Collector Emitter Breakdown (Max): 600V

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TPC6006-H(TE85L,F)

TPC6006-H(TE85L,F)

Toshiba Semiconductor and Storage
TPC6006-H(TE85L,F) Datasheet

In Stock: 1000

 Series: U-MOSIII-H
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TPCA8003-H(TE12LQM

TPCA8003-H(TE12LQM

Toshiba Semiconductor and Storage
TPCA8003-H(TE12LQM Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V

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TPCC8006-H(TE12LQM

TPCC8006-H(TE12LQM

Toshiba Semiconductor and Storage
TPCC8006-H(TE12LQM Datasheet

In Stock: 1000

 Series: U-MOSVI-H
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TK12Q60W,S1VQ

TK12Q60W,S1VQ

Toshiba Semiconductor and Storage
TK12Q60W,S1VQ Datasheet

In Stock: 1000

 Series: DTMOSIV
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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HN2S01FUTE85LF

HN2S01FUTE85LF

Toshiba Semiconductor and Storage
HN2S01FUTE85LF Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Configuration: 3 Independent
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 10V

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CMH07(TE12L,Q,M)

CMH07(TE12L,Q,M)

Toshiba Semiconductor and Storage
CMH07(TE12L,Q,M) Datasheet

In Stock: 1000

 Part Status: Active
 Diode Type: Standard
 Voltage - DC Reverse (Vr) (Max): 200V
 Current - Average Rectified (Io): 2A
 Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A

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CUS02(TE85L,Q,M)

CUS02(TE85L,Q,M)

Toshiba Semiconductor and Storage
CUS02(TE85L,Q,M) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 30V
 Current - Average Rectified (Io): 1A

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CLS02(T6L,CLAR,Q)

CLS02(T6L,CLAR,Q)

Toshiba Semiconductor and Storage
CLS02(T6L,CLAR,Q) Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 40V
 Current - Average Rectified (Io): 10A (DC)

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CLS03(TE16L,DNSO,Q

CLS03(TE16L,DNSO,Q

Toshiba Semiconductor and Storage
CLS03(TE16L,DNSO,Q Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 60V
 Current - Average Rectified (Io): 10A (DC)

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TCR2EE45,LM(CT

TCR2EE45,LM(CT

Toshiba Semiconductor and Storage
TCR2EE45,LM(CT Datasheet

In Stock: 4000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Output Configuration: Positive
 Output Type: Fixed
 Number of Regulators: 1
  • 4000: $0.0416
  • 8000: $0.0374
  • 12000: $0.0333
  • 28000: $0.0312
  • 100000: $0.027
  • 200000: $0.0266
RFQ
TBD62004AFWG,EL

TBD62004AFWG,EL

Toshiba Semiconductor and Storage
TBD62004AFWG,EL Datasheet

In Stock: 2000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Switch Type: General Purpose
 Number of Outputs: 7
 Ratio - Input:Output: 1:1
  • 2000: $0.1172
  • 6000: $0.1096
  • 10000: $0.1021
  • 50000: $0.0945
RFQ
TC32306FTG,EL

TC32306FTG,EL

Toshiba Semiconductor and Storage
TC32306FTG,EL Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Type: TxRx Only
 RF Family/Standard: General ISM
 Modulation: ASK, FSK

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TLP240D(TP1,F

TLP240D(TP1,F

Toshiba Semiconductor and Storage
TLP240D(TP1,F Datasheet

In Stock: 3000

 Series: TLP240D
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Mounting Type: Surface Mount
 Circuit: SPST-NO (1 Form A)

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TLP224G-2(F)

TLP224G-2(F)

Toshiba Semiconductor and Storage
TLP224G-2(F) Datasheet

In Stock: 146

 Series: TLP224G-2
 Packaging: Tube
 Part Status: Active
 Mounting Type: Through Hole
 Circuit: SPST-NO (1 Form A) x 2

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TLP3125(TP,F)

TLP3125(TP,F)

Toshiba Semiconductor and Storage
TLP3125(TP,F) Datasheet

In Stock: 1000

 Series: TLP3125
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Mounting Type: Surface Mount
 Circuit: SPST-NO (1 Form A)

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RN1130MFV,L3F

RN1130MFV,L3F

Toshiba Semiconductor and Storage
RN1130MFV,L3F Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RN2118MFV(TPL3)

RN2118MFV(TPL3)

Toshiba Semiconductor and Storage
RN2118MFV(TPL3) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RN1910FE,LF(CT

RN1910FE,LF(CT

Toshiba Semiconductor and Storage
RN1910FE,LF(CT Datasheet

In Stock: 8000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RN2109MFV,L3F

RN2109MFV,L3F

Toshiba Semiconductor and Storage
RN2109MFV,L3F Datasheet

In Stock: 1000

 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms

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TTA004B,Q

TTA004B,Q

Toshiba Semiconductor and Storage
TTA004B,Q Datasheet

In Stock: 3555

 Packaging: Bulk
 Part Status: Active
 Transistor Type: PNP
 Current - Collector (Ic) (Max): 1.5A
 Voltage - Collector Emitter Breakdown (Max): 160V

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RN2910FE,LF(CB

RN2910FE,LF(CB

Toshiba Semiconductor and Storage
RN2910FE,LF(CB Datasheet

In Stock: 4000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RFQ
HN1C01F-GR(TE85L,F

HN1C01F-GR(TE85L,F

Toshiba Semiconductor and Storage
HN1C01F-GR(TE85L,F Datasheet

In Stock: 63

 Packaging: Cut Tape (CT)
 Part Status: Discontinued at Digi-Key
 Transistor Type: 2 NPN (Dual)
 Current - Collector (Ic) (Max): 150mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RFQ
HN1A01F-GR(TE85L,F

HN1A01F-GR(TE85L,F

Toshiba Semiconductor and Storage
HN1A01F-GR(TE85L,F Datasheet

In Stock: 1000

 Packaging: Cut Tape (CT)
 Part Status: Discontinued at Digi-Key
 Transistor Type: 2 PNP (Dual)
 Current - Collector (Ic) (Max): 150mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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SSM6N39TU,LF

SSM6N39TU,LF

Toshiba Semiconductor and Storage
SSM6N39TU,LF Datasheet

In Stock: 1000

 Part Status: Active
 FET Type: 2 N-Channel (Dual)
 FET Feature: Standard
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 1.6A (Ta)

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RFQ
TPC8408,LQ(S

TPC8408,LQ(S

Toshiba Semiconductor and Storage
TPC8408,LQ(S Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N and P-Channel
 FET Feature: Logic Level Gate
 Drain to Source Voltage (Vdss): 40V

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RFQ
SSM3J35CT,L3F

SSM3J35CT,L3F

Toshiba Semiconductor and Storage
SSM3J35CT,L3F Datasheet

In Stock: 1000

 Series: -MOSVI
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
TPCL4201(TE85L,F)

TPCL4201(TE85L,F)

Toshiba Semiconductor and Storage
TPCL4201(TE85L,F) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: 2 N-Channel (Half Bridge)
 FET Feature: Standard
 Vgs(th) (Max) @ Id: 1.2V @ 200A

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2SA1588-O,LF

2SA1588-O,LF

Toshiba Semiconductor and Storage
2SA1588-O,LF Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 30V

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RN1116(TE85L,F)

RN1116(TE85L,F)

Toshiba Semiconductor and Storage
RN1116(TE85L,F) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Moisture Sensitivity Level (MSL): 1 (Unlimited)
 Transistor Type: NPN - Pre-Biased

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