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All products for Toshiba Semiconductor and Storage

Results: 4,624

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TLP7920(D4-LF1,F

TLP7920(D4-LF1,F

Toshiba Semiconductor and Storage
TLP7920(D4-LF1,F Datasheet

In Stock: 1000

 Packaging: Tube
 Part Status: Active
 Amplifier Type: Isolation
 Number of Circuits: 1
 Output Type: Differential
  • 1: $4.5549
  • 10: $3.7945
  • 50: $3.1872
  • 100: $2.7318
  • 250: $2.4283
  • 500: $2.2006
  • 1000: $2.0185
  • 2500: $1.935
RFQ
TMPM365FYXBG(HJ)

TMPM365FYXBG(HJ)

Toshiba Semiconductor and Storage
TMPM365FYXBG(HJ) Datasheet

In Stock: 840

 Series: TX03
 Packaging: Tray
 Part Status: Active
 Core Processor: ARM Cortex-M3
 Core Size: 32-Bit
  • 1: $3.9375
  • 10: $3.5438
  • 25: $3.2289
  • 168: $2.9138
  • 336: $2.6775
  • 504: $2.4413
  • 1008: $2.1263
  • 2520: $2.0475
RFQ
CLH02(TE16R,Q)

CLH02(TE16R,Q)

Toshiba Semiconductor and Storage
CLH02(TE16R,Q) Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Diode Type: Standard
 Voltage - DC Reverse (Vr) (Max): 300V
 Current - Average Rectified (Io): 3A (DC)

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TK3A60DA(STA4,Q,M)

TK3A60DA(STA4,Q,M)

Toshiba Semiconductor and Storage
TK3A60DA(STA4,Q,M) Datasheet

In Stock: 1000

 Series: -MOSVII
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
TK6A60W,S4VX

TK6A60W,S4VX

Toshiba Semiconductor and Storage
TK6A60W,S4VX Datasheet

In Stock: 1000

 Series: DTMOSIV
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
TK14A55D(STA4,Q,M)

TK14A55D(STA4,Q,M)

Toshiba Semiconductor and Storage
TK14A55D(STA4,Q,M) Datasheet

In Stock: 1000

 Series: -MOSVII
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
TPCP8J01(TE85L,F,M

TPCP8J01(TE85L,F,M

Toshiba Semiconductor and Storage
TPCP8J01(TE85L,F,M Datasheet

In Stock: 1000

 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 32V
 Current - Continuous Drain (Id) @ 25C: 5.5A (Ta)

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TPH12008NH,L1Q

TPH12008NH,L1Q

Toshiba Semiconductor and Storage
TPH12008NH,L1Q Datasheet

In Stock: 1000

 Series: U-MOSVIII-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
1SV281(TPH3,F)

1SV281(TPH3,F)

Toshiba Semiconductor and Storage
1SV281(TPH3,F) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Moisture Sensitivity Level (MSL): 1 (Unlimited)
 Capacitance @ Vr, F: 8.7pF @ 4V, 1MHz

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RFQ
TPC8111(TE12L,Q,M)

TPC8111(TE12L,Q,M)

Toshiba Semiconductor and Storage
TPC8111(TE12L,Q,M) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V

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RFQ
SSM3J108TU(TE85L)

SSM3J108TU(TE85L)

Toshiba Semiconductor and Storage
SSM3J108TU(TE85L) Datasheet

In Stock: 1000

 Series: U-MOSIII
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
SSM3K17SU,LF

SSM3K17SU,LF

Toshiba Semiconductor and Storage
SSM3K17SU,LF Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 50V

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RFQ
CUS521,H3F

CUS521,H3F

Toshiba Semiconductor and Storage
CUS521,H3F Datasheet

In Stock: 3000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 30V
 Current - Average Rectified (Io): 200mA

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RFQ
2SK2989(T6CANO,F,M

2SK2989(T6CANO,F,M

Toshiba Semiconductor and Storage
2SK2989(T6CANO,F,M Datasheet

In Stock: 1000

 Series: *
 Packaging: Bulk
 Part Status: Obsolete
 Mounting Type: Through Hole
 Supplier Device Package: TO-92MOD

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RFQ
CTS05S30,L3F

CTS05S30,L3F

Toshiba Semiconductor and Storage
CTS05S30,L3F Datasheet

In Stock: 10000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 30V
 Current - Average Rectified (Io): 500mA

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RFQ
1SS295(TE85L,F)

1SS295(TE85L,F)

Toshiba Semiconductor and Storage
1SS295(TE85L,F) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Diode Configuration: 1 Pair Series Connection
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 4V

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RFQ
DF2B7SL,L3F

DF2B7SL,L3F

Toshiba Semiconductor and Storage
DF2B7SL,L3F Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Moisture Sensitivity Level (MSL): 1 (Unlimited)
 Type: Zener
  • 10000: $0.0169
  • 30000: $0.0159
  • 50000: $0.0149
  • 100000: $0.0132
RFQ
DF2S5.6ASL,L3F

DF2S5.6ASL,L3F

Toshiba Semiconductor and Storage
DF2S5.6ASL,L3F Datasheet

In Stock: 10000

 Packaging: Tape & Reel (TR)
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Moisture Sensitivity Level (MSL): 1 (Unlimited)
 Type: Zener
  • 10000: $0.0225
  • 30000: $0.0212
  • 50000: $0.0198
  • 100000: $0.0176
RFQ
CMS09(TE12L,Q,M)

CMS09(TE12L,Q,M)

Toshiba Semiconductor and Storage
CMS09(TE12L,Q,M) Datasheet

In Stock: 1000

 Part Status: Active
 Diode Type: Schottky
 Voltage - DC Reverse (Vr) (Max): 30V
 Current - Average Rectified (Io): 1A
 Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A

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RFQ
SSM6J507NU,LF

SSM6J507NU,LF

Toshiba Semiconductor and Storage
SSM6J507NU,LF Datasheet

In Stock: 42000

 Series: U-MOSVI
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
TK31V60X,LQ

TK31V60X,LQ

Toshiba Semiconductor and Storage
TK31V60X,LQ Datasheet

In Stock: 5000

 Series: DTMOSIV-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
SSM3J334R,LF

SSM3J334R,LF

Toshiba Semiconductor and Storage
SSM3J334R,LF Datasheet

In Stock: 9000

 Series: U-MOSVI
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
2SC5066-O,LF

2SC5066-O,LF

Toshiba Semiconductor and Storage
2SC5066-O,LF Datasheet

In Stock: 3000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN
 Voltage - Collector Emitter Breakdown (Max): 12V
 Frequency - Transition: 7GHz

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RFQ
RN2710JE(TE85L,F)

RN2710JE(TE85L,F)

Toshiba Semiconductor and Storage
RN2710JE(TE85L,F) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RFQ
RN1906FE(T5L,F,T)

RN1906FE(T5L,F,T)

Toshiba Semiconductor and Storage
RN1906FE(T5L,F,T) Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RFQ
TLP2703(TP,E

TLP2703(TP,E

Toshiba Semiconductor and Storage
TLP2703(TP,E Datasheet

In Stock: 1500

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Number of Channels: 1
 Voltage - Isolation: 5000Vrms
 Current Transfer Ratio (Min): 900% @ 500A

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2SA1162-Y,LF

2SA1162-Y,LF

Toshiba Semiconductor and Storage
2SA1162-Y,LF Datasheet

In Stock: 1000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP
 Current - Collector (Ic) (Max): 150mA
 Voltage - Collector Emitter Breakdown (Max): 50V

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RN1401,LF

RN1401,LF

Toshiba Semiconductor and Storage
RN1401,LF Datasheet

In Stock: 9000

 Packaging: Tape & Reel (TR)
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Moisture Sensitivity Level (MSL): 1 (Unlimited)
 Transistor Type: NPN - Pre-Biased

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RFQ
TK50P04M1(T6RSS-Q)

TK50P04M1(T6RSS-Q)

Toshiba Semiconductor and Storage
TK50P04M1(T6RSS-Q) Datasheet

In Stock: 4000

 Series: U-MOSVI-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
TK25N60X,S1F

TK25N60X,S1F

Toshiba Semiconductor and Storage
TK25N60X,S1F Datasheet

In Stock: 156

 Series: DTMOSIV-H
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
SSM3K16CTC,L3F

SSM3K16CTC,L3F

Toshiba Semiconductor and Storage
SSM3K16CTC,L3F Datasheet

In Stock: 20000

 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V

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RFQ
RN1404S,LF

RN1404S,LF

Toshiba Semiconductor and Storage
RN1404S,LF Datasheet

In Stock: 3000

 Packaging: Tape & Reel (TR)
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Part Status: Active
 Moisture Sensitivity Level (MSL): 1 (Unlimited)
 Transistor Type: NPN - Pre-Biased

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RFQ
TPCA8051-H(T2L1,VM

TPCA8051-H(T2L1,VM

Toshiba Semiconductor and Storage
TPCA8051-H(T2L1,VM Datasheet

In Stock: 5000

 Series: U-MOSVI-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
TPH5200FNH,L1Q

TPH5200FNH,L1Q

Toshiba Semiconductor and Storage
TPH5200FNH,L1Q Datasheet

In Stock: 1000

 Series: U-MOSVIII-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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TPC6503(TE85L,F,M)

TPC6503(TE85L,F,M)

Toshiba Semiconductor and Storage
TPC6503(TE85L,F,M) Datasheet

In Stock: 1000

 Series: U-MOSVII
 Part Status: Active
 Transistor Type: NPN
 Current - Collector (Ic) (Max): 1.5A
 Voltage - Collector Emitter Breakdown (Max): 30V

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RFQ
TK7J90E,S1E

TK7J90E,S1E

Toshiba Semiconductor and Storage
TK7J90E,S1E Datasheet

In Stock: 55

 Series: -MOSVIII
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
TK28N65W,S1F

TK28N65W,S1F

Toshiba Semiconductor and Storage
TK28N65W,S1F Datasheet

In Stock: 95

 Series: DTMOSIV
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)

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RFQ
2SA1680,T6ASTIF(J

2SA1680,T6ASTIF(J

Toshiba Semiconductor and Storage
2SA1680,T6ASTIF(J Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: PNP
 Current - Collector (Ic) (Max): 2A
 Voltage - Collector Emitter Breakdown (Max): 50V

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RFQ
2SA1837,HFEMBJF(J

2SA1837,HFEMBJF(J

Toshiba Semiconductor and Storage
2SA1837,HFEMBJF(J Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: PNP
 Current - Collector (Ic) (Max): 1A
 Voltage - Collector Emitter Breakdown (Max): 230V

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RFQ
2SA1837,HFEYHF(M

2SA1837,HFEYHF(M

Toshiba Semiconductor and Storage
2SA1837,HFEYHF(M Datasheet

In Stock: 1000

 Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: PNP
 Current - Collector (Ic) (Max): 1A
 Voltage - Collector Emitter Breakdown (Max): 230V

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