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EPC2107 Discrete Semiconductor Products

EPC
EPC2107 HongDa Electronics EPC2107
  • Manufacturer Part# EPC2107
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET 3 N-CH 100V 9BGA
  • More DetailMosfet Array 3 N-Channel (Half Bridge + Synchronou...
In Stock: 17500

Can ship immediately

Datasheet:
EPC2107 Datasheet

Technical Details

  • Series:eGaN®
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:3 N-Channel (Half Bridge + Synchronous Bootstrap)
  • FET Feature:GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:1.7A, 500mA
  • Rds On (Max) @ Id, Vgs:320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
  • Vgs(th) (Max) @ Id:2.5V @ 100µA, 2.5V @ 20µA

 

  • Gate Charge (Qg) (Max) @ Vgs:0.16nC @ 5V, 0.044nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:16pF @ 50V, 7pF @ 50V
  • Power - Max:--
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:9-VFBGA
  • Supplier Device Package:9-BGA (1.35x1.35)

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