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IRFH5302DTRPBF

Infineon Technologies
IRFH5302DTRPBF HongDa Electronics IRFH5302DTRPBF
  • Manufacturer Part# IRFH5302DTRPBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 30V 29A 8VQFN
  • More DetailN-Channel 30V 29A (Ta), 100A (Tc) 3.6W (Ta), 104W ...
In Stock: 1000

Can ship immediately

Datasheet:
IRFH5302DTRPBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.35V @ 100µA
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PQFN (5x6) Single Die
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):3.6W (Ta), 104W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3635pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:55nC @ 10V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:2.5 mOhm @ 50A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:29A (Ta), 100A (Tc)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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