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IRFHM8326TRPBF

Infineon Technologies
IRFHM8326TRPBF HongDa Electronics IRFHM8326TRPBF
  • Manufacturer Part# IRFHM8326TRPBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 30V 25A PQFN
  • More DetailN-Channel 30V 19A (Ta) 2.8W (Ta), 37W (Tc) Surface...
In Stock: 1000

Can ship immediately

Datasheet:
IRFHM8326TRPBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.2V @ 50µA
  • Package / Case:8-PowerTDFN
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.8W (Ta), 37W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2496pF @ 10V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
  • Series:HEXFET®

 

  • Rds On (Max) @ Id, Vgs:4.7 mOhm @ 20A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:19A (Ta)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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