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IRFH5053TR2PBF

Infineon Technologies
IRFH5053TR2PBF HongDa Electronics IRFH5053TR2PBF
  • Manufacturer Part# IRFH5053TR2PBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 9.3A PQFN56
  • More DetailN-Channel 100V 9.3A (Ta), 46A (Tc) 3.1W (Ta), 8.3W...
In Stock: 1000

Can ship immediately

Datasheet:
IRFH5053TR2PBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.9V @ 100µA
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PQFN (5x6) Single Die
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):3.1W (Ta), 8.3W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1510pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:18 mOhm @ 9.3A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:9.3A (Ta), 46A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Cut Tape (CT) 

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