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IRFH5025TR2PBF

Infineon Technologies
IRFH5025TR2PBF HongDa Electronics IRFH5025TR2PBF
  • Manufacturer Part# IRFH5025TR2PBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 250V 3.8A PQFN
  • More DetailN-Channel 250V 3.8A (Ta) 3.6W (Ta), 8.3W (Tc) Surf...
In Stock: 1000

Can ship immediately

Datasheet:
IRFH5025TR2PBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 150µA
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:8-PQFN (5x6)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):3.6W (Ta), 8.3W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2150pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:56nC @ 10V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:100 mOhm @ 5.7A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:3.8A (Ta)
  • Drain to Source Voltage (Vdss):250V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Cut Tape (CT) 

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