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IRFH7932TR2PBF

Infineon Technologies
IRFH7932TR2PBF HongDa Electronics IRFH7932TR2PBF
  • Manufacturer Part# IRFH7932TR2PBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 30V 24A PQFN56
  • More DetailN-Channel 30V 24A (Ta), 104A (Tc) 3.4W (Ta) Surfac...
In Stock: 1000

Can ship immediately

Datasheet:
IRFH7932TR2PBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.35V @ 100µA
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PQFN (5x6) Single Die
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):3.4W (Ta)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:4270pF @ 15V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:51nC @ 4.5V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:3.3 mOhm @ 25A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:24A (Ta), 104A (Tc)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Cut Tape (CT) 

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