IRL60SL216 Infineon Technologies | HongDa Electronics

IRL60SL216 HongDa Electronics

Manufacturer Part# IRL60SL216
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET N-CH 60V 195A
More DetailN-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-...

In Stock: 764

Can ship immediately

Datasheet:

IRL60SL216 Datasheet

Technical Details

Vgs(th) (Max) @ Id:2.4V @ 250µA
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:TO-262-3
Mounting Type:Through Hole
Operating Temperature:-55°C ~ 175°C (TJ)
Power Dissipation (Max):375W (Tc)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:15330pF @ 25V
Vgs (Max):±20V
Gate Charge (Qg) (Max) @ Vgs:255nC @ 4.5V

Series:HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs:1.95 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drain to Source Voltage (Vdss):60V
Technology:MOSFET (Metal Oxide)
FET Type:N-Channel
Part Status:Active
Packaging:Tube

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