IRL6372TRPBF Infineon Technologies | HongDa Electronics

IRL6372TRPBF HongDa Electronics

Manufacturer Part# IRL6372TRPBF
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET 2N-CH 30V 8.1A 8SOIC
More DetailMosfet Array 2 N-Channel (Dual) 30V 8.1A 2W Surfac...

In Stock: 1000

Can ship immediately

Datasheet:

IRL6372TRPBF Datasheet

Technical Details

Vgs(th) (Max) @ Id:1.1V @ 10µA
Base Part Number:IRL6372PBF
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
Mounting Type:Surface Mount
Operating Temperature:-55°C ~ 150°C (TJ)
Power - Max:2W
Input Capacitance (Ciss) (Max) @ Vds:1020pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V

Series:HEXFET®
Rds On (Max) @ Id, Vgs:17.9 mOhm @ 8.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C:8.1A
Drain to Source Voltage (Vdss):30V
FET Feature:Logic Level Gate
FET Type:2 N-Channel (Dual)
Part Status:Active
Packaging:Tape & Reel (TR)

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