IRL6342PBF Infineon Technologies | HongDa Electronics

IRL6342PBF HongDa Electronics

Manufacturer Part# IRL6342PBF
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET N-CH 30V 9.9A 8SOIC
More DetailN-Channel 30V 9.9A (Ta) 2.5W (Ta) Surface Mount 8-...

In Stock: 1000

Can ship immediately

Datasheet:

IRL6342PBF Datasheet

Technical Details

Vgs(th) (Max) @ Id:1.1V @ 10µA
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
Mounting Type:Surface Mount
Operating Temperature:-55°C ~ 150°C (TJ)
Power Dissipation (Max):2.5W (Ta)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:1025pF @ 25V
Vgs (Max):±12V
Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V

Series:HEXFET®
Rds On (Max) @ Id, Vgs:14.6 mOhm @ 9.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:9.9A (Ta)
Drain to Source Voltage (Vdss):30V
Technology:MOSFET (Metal Oxide)
FET Type:N-Channel
Part Status:Discontinued at Digi-Key
Packaging:Tube

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