IXTF1R4N450

Technical Details

• Vgs(th) (Max) @ Id:6V @ 250µA
• Package / Case:i4-Pac™-5 (3 Leads)
• Supplier Device Package:ISOPLUS i4-PAC™
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):190W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:3300pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:88nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:40 Ohm @ 50mA, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
• Drain to Source Voltage (Vdss):4500V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube