IXTF6N200P3

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:143nC @ 10V
• Package / Case:ISOPLUSi5-Pak™
• Supplier Device Package:ISOPLUS i4-PAC™
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):215W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:3700pF @ 25V
• Vgs (Max):±20V
• Series:Polar™

• Vgs(th) (Max) @ Id:5V @ 250µA
• Rds On (Max) @ Id, Vgs:4.2 Ohm @ 3A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:4A (Tc)
• Drain to Source Voltage (Vdss):2000V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active