IXTF2N300P3

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:73nC @ 10V
• Package / Case:ISOPLUSi5-Pak™
• Supplier Device Package:ISOPLUS i4-PAC™
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):160W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1890pF @ 25V
• Vgs (Max):±20V
• Series:Polar™

• Vgs(th) (Max) @ Id:5V @ 250µA
• Rds On (Max) @ Id, Vgs:21 Ohm @ 1A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:1.6A (Tc)
• Drain to Source Voltage (Vdss):3000V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active