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IXTY08N100P

IXYS
IXTY08N100P HongDa Electronics IXTY08N100P
  • Manufacturer Part# IXTY08N100P
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 1000V 800MA TO-252
  • More DetailN-Channel 1000V 800mA (Tc) 42W (Tc) Surface Mount ...
In Stock: 1000

Can ship immediately

Datasheet:
IXTY08N100P Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 50µA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252, (D-Pak)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):42W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:240pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:11.3nC @ 10V

 

  • Series:Polar™
  • Rds On (Max) @ Id, Vgs:20 Ohm @ 500mA, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:800mA (Tc)
  • Drain to Source Voltage (Vdss):1000V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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