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IXTY1R6N100D2

IXYS
IXTY1R6N100D2 HongDa Electronics IXTY1R6N100D2
  • Manufacturer Part# IXTY1R6N100D2
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 1000V 1.6A DPAK
  • More DetailN-Channel 1000V 1.6A (Tc) 100W (Tc) Surface Mount ...
In Stock: 395

Can ship immediately

Datasheet:
IXTY1R6N100D2 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:--
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252, (D-Pak)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):100W (Tc)
  • FET Feature:Depletion Mode
  • Input Capacitance (Ciss) (Max) @ Vds:645pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:27nC @ 5V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:10 Ohm @ 800mA, 0V
  • Drive Voltage (Max Rds On, Min Rds On):--
  • Current - Continuous Drain (Id) @ 25°C:1.6A (Tc)
  • Drain to Source Voltage (Vdss):1000V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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