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IXTY1R4N120PHV

IXYS
IXTY1R4N120PHV HongDa Electronics IXTY1R4N120PHV
  • Manufacturer Part# IXTY1R4N120PHV
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH
  • More DetailN-Channel 1200V 1.4A (Tc) 86W (Tc) Surface Mount T...
In Stock: 1000

Can ship immediately

Datasheet:
IXTY1R4N120PHV Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.5V @ 100µA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):86W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:666pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:24.8nC @ 10V

 

  • Series:Polar™
  • Rds On (Max) @ Id, Vgs:13 Ohm @ 700mA, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
  • Drain to Source Voltage (Vdss):1200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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