PMV65UN,215 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1V @ 250µA
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:TO-236AB (SOT23)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):310mW (Ta), 2.17W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:183pF @ 10V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:3.9nC @ 4.5V

• Series:--
• Rds On (Max) @ Id, Vgs:76 mOhm @ 2A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)