PMV65XP/MIR

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 4.5V
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:TO-236AB
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):480mW (Ta), 4.17W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:744pF @ 20V
• Vgs (Max):±12V
• Series:--

• Vgs(th) (Max) @ Id:900mV @ 250µA
• Rds On (Max) @ Id, Vgs:74 mOhm @ 2.8A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete