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SI2304BDS-T1-E3

Vishay Siliconix
SI2304BDS-T1-E3 HongDa Electronics SI2304BDS-T1-E3
  • Manufacturer Part# SI2304BDS-T1-E3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 30V 2.6A SOT23-3N-Channel 30V 2.6A (Ta...
  • More DetailN/A
In Stock: 9000

Can ship immediately

Datasheet:
SI2304BDS-T1-E3 Datasheet

Technical Details

  • Series:TrenchFET®
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:70 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Power - Max:--

 

  • Gate Charge (Qg) (Max) @ Vgs:4nC @ 5V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:225pF @ 15V
  • FET Feature:--
  • Power Dissipation (Max):750mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Base Part Number:--

Description



1. FEATURES

     1. Halogen-free According to IEC 61249-2-21 Definition

     2. TrenchFET® Power MOSFET

     3. 100 % Rg Tested

     4. Compliant to RoHS Directive 2002/95/EC

2. PRODUCT SUMMARY

      image.png

3. Pin configuration

        image.png

4. Pin overview

                image.png

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