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SI2309DS-T1-E3

Vishay Siliconix
SI2309DS-T1-E3 HongDa Electronics SI2309DS-T1-E3
  • Manufacturer Part# SI2309DS-T1-E3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 60V 1.25A SOT23-3
  • More DetailP-Channel 60V 1.25W (Ta) Surface Mount SOT-23-3 (...
In Stock: 1000

Can ship immediately

Datasheet:
SI2309DS-T1-E3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:1V @ 250µA (Min)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):1.25W (Ta)
  • FET Feature:--
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
  • Series:TrenchFET®

 

  • Rds On (Max) @ Id, Vgs:340 mOhm @ 1.25A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:--
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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